Modeling of gain in advanced CMOS technologies
A. Spessot, F. Gattel, P. Fantini, A. Marmiroli
gain, mobility, strain
The impressive downscaling of CMOS technology and its more and more massive introduction in System-on-chip (SoC) oriented applications require comprehensive modeling approach able to describe such different world (digital and analog) starting from a single technological platform. In this pape we deep insight the modeling of gain, a key parameter ruling the analog performances of advances CMOS technologies, in relation with their layout dependence affected by the shallow trench isolation induced mechanical stress.
Nanotech 2008 Conference Program Abstract