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Improved Methodology to Nucleate ZnxCd1-xSe cladded ZnyCd1-ySe Quantum Dots using PMP-MOCVD for Lasers and Electroluminescent Phosphors
F. Al-Amoody, A. Rodriguez, E. Suarez, W. Huang, F. Jain
University of Connecticut, US
Keywords:
ZnCdSe, nucleation, cladded dots, PMP-MOCVD
Abstract:
Earlier, we have reported growing 3-8 nm CdSe and pseudomorophic ZnxCd1-xSe/ZnyCd1-ySe cladded quantum dots (QDs) (x > y) in a novel Photo assisted Microwave Plasma Metalorganic Chemical Vapor Phase Deposition (PMP-MOCVD) reactor. Influence of growth parameters including microwave power, ultraviolet intensity, gas phase II/VI [Zn+Cd/Se] molar ratio, temperature of growth, and post-growth processing was investigated. This paper reports improvement in uniformity of dots nucleated by a methodology which preheats the reaction zone prior to the initiation of Microwave Plasma in a metalorganic chemical vapor deposition (MOCVD).
Nanotech 2008 Conference Program Abstract
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