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New Properties and New Challenges in MOS Compact Modeling
X. Zhou, G.H. See, G. Zhu, Z. Zhu, S. Lin, C. Wei, A. Srinivas, J. Zhang
Nanyang Technological University, SG
Keywords:
compact model, multiple-gate, nanowire, MOSFET, unified regional modeling
Abstract:
As bulk-MOS technology is approaching its fundamental limit, non-classical devices such as multiple-gate (MG) and silicon-nanowire (SiNW) transistors emerge as promising candidates for future generation device building blocks. This trend poses new challenges in developing a compact model suitable for these new device structures, and requires a paradigm shift in the core model structure. Conventional bulk-MOS models are based on four-terminal unipolar conduction in a doped channel with ideal symmetrical PN-junction source/drain contacts. In MG/NW MOSFETs, however, the device becomes three-terminal with undoped channel and possible bipolar conduction, and source/drain contacts become an integral part of intrinsic channel. Source/drain asymmetry, either intentional or unintentional, in a theoretically symmetric MOSFET also becomes important to be captured in a compact model, which is nontrivial in a model that depends on terminal source/drain swapping at the circuit level. This paper discusses these new challenges and demonstrates solutions based on the unified regional modeling (URM) approach.
Nanotech 2008 Conference Program Abstract
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