2008 NSTI Nanotechnology Conference and Trade Show - Nanotech 2008 - 11th Annual

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Clean Technology 2008

New Properties and New Challenges in MOS Compact Modeling

X. Zhou, G.H. See, G. Zhu, Z. Zhu, S. Lin, C. Wei, A. Srinivas, J. Zhang
Nanyang Technological University, SG

Keywords:
compact model, multiple-gate, nanowire, MOSFET, unified regional modeling

Abstract:
As bulk-MOS technology is approaching its fundamental limit, non-classical devices such as multiple-gate (MG) and silicon-nanowire (SiNW) transistors emerge as promising candidates for future generation device building blocks. This trend poses new challenges in developing a compact model suitable for these new device structures, and requires a paradigm shift in the core model structure. Conventional bulk-MOS models are based on four-terminal unipolar conduction in a doped channel with ideal symmetrical PN-junction source/drain contacts. In MG/NW MOSFETs, however, the device becomes three-terminal with undoped channel and possible bipolar conduction, and source/drain contacts become an integral part of intrinsic channel. Source/drain asymmetry, either intentional or unintentional, in a theoretically symmetric MOSFET also becomes important to be captured in a compact model, which is nontrivial in a model that depends on terminal source/drain swapping at the circuit level. This paper discusses these new challenges and demonstrates solutions based on the unified regional modeling (URM) approach.


Nanotech 2008 Conference Program Abstract