2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

Simulating CMOS Circuits Containing Multiple FET Types Including the Geometric Dependence of Correlation between FET Types

J-E Park, C-H Liang, J. Assenmacher, J. Watts, S-J Park and R. Wachnik
IBM, US

Keywords:
MOSFET, compact models, correlation

Abstract:
MOSFET device of similar design but different threshold voltage are often built on a single chip. It is important to be able to simulate with a compact model the variation of such devices including the correlation between them. This paper describes a method of simultating the variation included the geometric dependence of the correlations arising from common halo and separate Vt implants in the devices.

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