2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

Charge-Based Threshold Voltage Definition for Undoped Single Gate and Symmetric Double Gate MOSFETs

C. Galup-Montoro, M.C. Schneider and A.I.A. Cunha
Universidade Federal da Bahia - UFBA, BR

Keywords:
threshold voltage, intrinsic channel, undoped MOSFET, double gate MOSFET

Abstract:
The purpose of this paper is to extend a charge-based definition of threshold voltage, already applied to conventional bulk MOSFETs to undoped single gate and symmetric double gate MOSFETs. The threshold surface potential is determined as the value for which the mobile charge density is equal to the thermal charge density. The threshold voltage evaluated according to this definition is compared to the threshold voltage determined through the second derivative method.

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