2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

Synthesis and Device Applications of Massively Aligned Single-Walled Carbon Nanotubes

C. Zhou
University of Southern California, US

Keywords:
aligned nanotube, sapphire, top gate, diameter

Abstract:
The assembly and integration of nanotube devices into sophisticated circuits and systems remains a formidable challenge. We have invented a novel nanotube-on-insulator (NOI) approach to produce a large number of nanotube devices at desired positions based on aligned SWNTs, which bears analogy to the industry-adopted silicon-on-insulator (SOI) technique and could be further exploited to construct integrated nanotube circuits. Key to our success is the synthesis of massively aligned single-walled carbon nanotubes on crystalline sapphire and quartz substrates using a chemical vapor deposition technique. In addition, intriguing substrate dependence has been observed, as aligned growth was observed with a-plane and r-plane sapphire substrates, but not for c-plane substrates. Furthermore, we have carried out in-depth calculation of the Lennard-Jones potential between carbon nanotubes and sapphire substrates for the first time, which aggress very well with our experimental observation. Based on the aligned nanotubes, we have further demonstrated both top-gated and polymer-electrolyte-gated field-effect transistor arrays with minimized parasitic capacitance and high device yield ~ 98%. Moreover, we have successfully developed a way to transfer these aligned nanotube arrays to flexible substrates.

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Nanotech 2007 Conference Program Abstract

 
 

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