2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

Theoretical study of Graphene Nanoribbon Field-Effect Transistors

G. Liang, N. Neophytou, D. Nikonov and M. Lundstrom
Purdue Unioversity, US

Keywords:
MOSFET, carbon nanoribbon, CNR

Abstract:
In this work, we theoretically studied the electronic structure of CNRs using pz-orbital tight-binding model as well as a simple analytical formula. Moreover, the ballistic performance of CNR MOSFETs using a semi-classical “top-of-the-barrier” MOSFET model is investigated. 5nm wide CNR MOSFETs show comparable performance with 1.6 nm diameter CNT MOSFETs, and outperform silicon MOSFETs by over 100%.

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Nanotech 2007 Conference Program Abstract

 
 

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