Characterization of Nanaoporous Low-Dielectric Constant SiCOH Films using Organosilane Precursor
K. Heo, S.-G. Park, J. Yoon, K.S. Jin, S. Jin, S.-W. Rhee and M. Ree
Pohang University of Science and Technology, KR
GISAXS, XR, PECVD, Low-k SiCOH Film, Organosilane Precursor
The grazing incidence small-angle X-ray scattering (GISAXS) and X-ray reflectivity (XR) analysis were performed to investigate the nanoporous structure of low dielectric constant carbon-doped silicon oxide (SiCOH) films, which were deposited with plasma enhanced chemical vapor deposition (PECVD) using vinyltrimethylsilane (VTMS), divinyldimethylsilane (DVDMS), and tetravinylsilane (TVS) as precursor and oxygen gas. And we made a close investigation into the effect of number of vinyl groups and post annealing on nanoporous structure. Through the GISAXS measurements, we found that the SiCOH film using VTMS only has well defined spherical nanopores within the film after thermal annealing. Also, volatile phase was evaporated to make nanopores within the film by thermal annealing. However, the other SiCOH films showed featureless scattering profiles irrespective of annealing conditions and the decreases of electron density were smaller than VTMS film. With more vinyl groups in the precursor, films contain more organic phase with less volatile characteristic due to the cross linking of vinyl groups. Collectively, the presenting findings show that the vinylsilane was quite effective to deposit SiCOH/CxHy dual phase films.
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Nanotech 2007 Conference Program Abstract