2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

A charge based compact flicker noise model including short channel effects

A.S. Roy and C.C. Enz
EPFL, CH

Keywords:
MOSFET, noise, flicker

Abstract:
The low-frequency (LF) noise in MOS devices has been the subject of intensive research during past years. It is becoming a major concern for scaled devices because the LF noise increases as the inverse of the device area. Therefore accurate compact modeling of power spectral density (PSD) of flicker noise is becoming increasingly important. Although the impact of field dependent mobility on thermal noise has received a lot of attention, almost no study has been done on the flicker noise. Therefore, it is not very clear how field dependent mobility affects flicker noise. In this work we apply our generalized noise calculation methodology to the flicker noise calculation.

Back to Program

Sessions Sunday Monday Tuesday Wednesday Thursday Authors Keywords

Nanotech 2007 Conference Program Abstract

 
 

Names, and logos of other organizations are the property of those organizations and not of NSTI.
This event is not open to the general public and NSTI reserves the right to refuse admission and participation to any individual.