2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

Theory of source-drain partitioning in MOSFET

A.S. Roy, C.C. Enz and J.M Sallese
EPFL, CH

Keywords:
MOSFET, charge patitioning

Abstract:
The Ward-Dutton (WD) partitioning scheme is used extensively to develop transient and high frequency advanced compact models for MOSFET devices. Recently it has been shown that WD partitioning fails for field dependent mobility or for laterally asymmetrical doping. This work is aimed at presenting a generalization of the partitioning concept.

Back to Program

Sessions Sunday Monday Tuesday Wednesday Thursday Authors Keywords

Nanotech 2007 Conference Program Abstract

 
 

Names, and logos of other organizations are the property of those organizations and not of NSTI.
This event is not open to the general public and NSTI reserves the right to refuse admission and participation to any individual.