2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

Explicit Short Channel Compact Model of Independent Double Gate Mosfet

M. Reyboz, O. Rozeau, T. Poiroux, P. Martin, M. Cavelier and J. Jomaah
CEA-LETI, FR

Keywords:
IDG MOSFET, explicit compact model, Short Channel Effects

Abstract:
This paper describes an explicit short channel compact model of Independent Double Gate (IDG) MOSFET with undoped channel. The validity of this model is demonstrated by comparison with Atlas simulations. The model was implemented in circuit simulator in VerilogA language to design digital and analog circuits using the independent gate structures.

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