Applications of X-ray Measurement Techniques in Nano-Scale Semiconductor Device Manufacturing
Jordans Valley Semiconductors, US
X-ray measurement, nano-scale semiconductor device manufacturing
As semiconductor devices shrink to nano-scale regime, ultra-thin films(nm to few hundred nm) are deposited during manufacturing. These filmsrequire very stringent control for optimum performance of semiconductordevices. At the same time, new materials are adopted for gate stack,capacitors, inter-layer dielectrics, electrodes and inter-connects.Existing measurement techniques like opto-acoustics, sheet resistivityand spectroscopic ellipsometry struggle to accurately measure thesefilms and stacks. In addition to thickness measurements, other materialproperties like, phase, texture, and strain are becoming equallyimportant. X-ray based methods have quickly evolved to fill the gap.Recent improvements in x-ray technology allowing high-throughput,small-spot, product wafer measurements has spurred a rapid adoption ofx-ray based metrology in fabs. This talk will review basics of x-rayfluorescence [XRF], x-ray diffraction [XRD], and x-ray reflectivity[XRR] techniques. In addition, details of recent technology improvementsfor XRF, XRD and XRR (x-ray optics, detectors, analysis algorithms,array based high resolution detectors) will be discussed. A briefreview of various thin-film semiconductors applications (Logic, DRAM,Flash) will also be included.
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Nanotech 2007 Conference Program Abstract