2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

The Initial Reverse-Bias Injecting P+-N Junction Mode in P+-N-P+- Structures With Punchthrough

I.L. Mats
Engineering Manager, CA

Keywords:
design, devices, current, nanostructures, punch-off, punchthrough, reachthrough, voltage

Abstract:
P+NP+ (N+PN+) – structures with the punchthrough (PT) effect and their modifications are used widely in different semiconductors’ devices. All of them can split into two groups of the operating mode: 1. schemas with the floating base (FB); and 2. structures with the short-cut (SC) of the emitter-base p-n-junction. Development of the punchthrough effect and its integration in conventional components of ICs requires the analyzing of sandwich structures with the initial reverse-bias (RB) emitter-base junction and the PT mode. We described behavior of P+NP+ (N+PN+) - structures with the initial reverse-bias injecting P+-N junction with the punchthrough process; provided calculation drop voltages and volt – ampere (current) characteristics; measured the punchthrough structures with varies doping medium layers. Information can be used for the devices, based on punchthrough effect and allows for an introduction this RB connection as the operating mode. On the other hand received data help to avoid (mitigate) punchthrough influence in nanostructures.

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