2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

U-Shaped Engery Distribution of Electronic Interface Traps on Oxidized Silicon

Z. Chen, B.B. Jie and C-T Sah
University of Florida, US

Keywords:
MOS capacitance, MOS transistor, Recombination DCIV, Capacitance Voltge

Abstract:
Electronic interface traps with their bound-electron and bound-hole energy levels distributed in the silicon energy gap further distort the Recombination DC Current-Voltage (R-DCIV) and High-Frequency and Low-Frequency Capacitance-Voltage (HFCV and LFCV) characteristics from those due to interface traps at one or few energy levels. Theoretical IV and CV characteristics are computed for U-shaped distribution, in the silicon energy gap, of the energy levels or concentration of interface traps, and for interface traps all at one energy level. The neutral electron trap and neutral hole trap model, due to random Si:Si and Si:O bond angle and length at the SiO2/Si interface, is used. Experimental RDCIV, HFCV and LFCV favor the U-shaped distribution over one or few enegy levels. This is consistent with theoretical expectation from the random bond length and angle variations of the interface traps on oxidized silicon.

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