2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

Fabrication of Nano-Scale Channel Field-Effect Device in Standard CMOS Manufacturing Process for pH Sensing

A. Cohen, A. Doron, M. Horesh, D. Ullien, M. Beraha, U. Virobnik and I. Levy
Research Scientist, IL

Keywords:
field effect device, thin SOI, pH sensor, bio sensors

Abstract:
Micro-fabricated semiconductor devices are becoming increasingly relevant not only in the field of semiconductors but also for the detection of biological and chemical components. The integration of active biological materials with different types of sensitive transducers offers the possibility of generating highly sensitive, specific, selective and reliable biosensors. This paper presents the fabrication of a sensitive field-effect device (FED) made on silicon on insulator (SOI) wafers with conductive 10nm thin SOI layer and 1um buried oxide. Initial testing results indicated on a very sensitive FED with high signal to noise ratio which is probably one of the critical characteristics needed for biosensing. The potential for CMOS standard, high volume manufacturing of sensing devices may enable various types of applications including medical diagnostics for biomarker analysis.

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