2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

Gummel Symmetry with Higher-order Derivatives in MOSFET Compact Models

G.H. See, X. Zhou, K. Chandrasekaran, S.B. Chiah, Z.M. Zhu, G.H. Lim, C.Q. Wei, S.H. Lin and G.J. Zhu
Nanyang Technological University, SG

Keywords:
compact modeling, Gummel symmetry, MOSFET, effective drain-source voltage

Abstract:
One of the critical problems in Gummel symmetry at higher-order derivatives that still exists in current and next generation MOS compact models has been solved with a simple modification of the mathematical smoothing function. The proposed approach of formulating the effective drain-source voltage with built-in bulk-bias dependency is always symmetrical regardless of the value of the smoothing parameter. Together with other necessary and sufficient conditions to meet the model symmetry requirements, the proposed simple model has made a critical milestone contribution to resolving one of the key showstoppers in the current industry-standard MOS model, as well as for next generation model to trade off symmetry at higher-order derivatives and geometry-dependent effective drain–source voltage smoothing parameter.

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