2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

Modeling of Saturation-Region Characteristics of Nanoscale Double-Gate MOSFETs

J.G. Fossum and S. Chouksey
University of Florida, US

Keywords:
FinFET, velocity overshoot, drain-induced charge enhancement

Abstract:
Saturation-region effects, unique to double-gate (DG) MOSFETs, are discussed and modeled in UFDG. The effects include carrier velocity overshoot and drain-induced charge enhancement (DICE). The former, modeled in terms of carrier temperature, implies ballistic-like currents in nanoscale DG FinFETs. The latter, modeled in two dimensions with bulk inversion, increases drive current and, most significantly, gate capacitance, in nanoscale DG MOSFETs.

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