2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

High Conentration of Interface Traps in MOS Transistor Modeling

Z. Chen, B.B. Jie and C-T Sah
Xiamen University, CN

Keywords:
MOST, MOSC, interface traps, SiO2, Si

Abstract:
Modifications of the MOS capacitor and transistor characteristics by the presence of a high concentration of interface traps are described. Change or distortion of the gate/base voltage dependent characteristics are presented, such as the gate capacitance at high- and low-frequencies (with respect to the trapping frequencies), base recombiantion conductance and current (R-DCIV), drain and source currents. Parameters cover the basewell (body) impurity concentration of 1E16 to 1E19 cm-3 and interface trap concentration of 1E08 to 1E14 cm-2, corresponding to unstressed logic-RF and end-of-life memory transistors. A statistical-physics-based mathematical model equation is employed to cover all types of one-trapped-electron (or hole) interface traps including the short-range neutral and the long-range Coulombic trapping potential wells, respectively from spatially distributed random bond angles and lengths, and from isolated impurity ions.

Back to Program

Sessions Sunday Monday Tuesday Wednesday Thursday Authors Keywords

Nanotech 2007 Conference Program Abstract

 
 

Names, and logos of other organizations are the property of those organizations and not of NSTI.
This event is not open to the general public and NSTI reserves the right to refuse admission and participation to any individual.