2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

DIRECT: An Efficient Optimization Scheme for Mask Generation Using Inverse Lithography

W. Xiong, M-C Tsai, J. Zhang and Z. Yu
Tsinghua University, CN

Keywords:
direct lithography, inverse lithography, RETs, SA

Abstract:
Resolution Enhancement Technologies (RETs) are widely used to cope with the severe optical effects that are manifests in sub-wavelength lithography. Inverse Lithography Technique (ILT) has recently been proposed [1-3] as an effective RET for sub wavelength technology. ILT increases the degree-of-freedom in mask data manipulation, and allows automatic correction to 2D pattern distortion. In this work, a realistic aerial image model with an efficient optimization scheme is developed to pattern metal layers for the 65nm technology node. Simulation results show the optimized mask provide good fidelity in patterning. We called our method discrete reticle technique, DIRECT.

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