2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

A unique opportunity for industrial scale fabrication of semiconductor nanowire-based devices

B. Nikoobkht
National Institute of Standards and Technology, US

Keywords:
nanowire, zinc oxide, nanodevice, directed assembly

Abstract:
A method is developed which enables horizontal growth of semiconductor nanowires on predefined locations. In this architecture, despite most bottom-up approaches, there is no need for post-growth treatments and alignment of nanowires on a given surface. In the presented method, sapphire substrate is patterned with gold catalyst using photolithography. After growth of nanowires, using a 2nd step of photolithography, electric contacts are placed precisely on nanowires. Using this technique, large scale electrically addressable nanowires and top-gated field effect nanowire transistors have been made and their electric transport properties have been measured.

Back to Program

Sessions Sunday Monday Tuesday Wednesday Thursday Authors Keywords

Nanotech 2007 Conference Program Abstract

 
 

Names, and logos of other organizations are the property of those organizations and not of NSTI.
This event is not open to the general public and NSTI reserves the right to refuse admission and participation to any individual.