2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

Effect of N Incorporation on the Photoluminescence Characteristics of GaAsSb(N)/GaAs Single Quantum Well Structures and Light Emitting Device Beyond 1.55 ?m

K. Nunna, S. Iyer, J. Li and W. Collis
North Carolina Agricultural and Technical State University, US

Keywords:
LED, GaAsSbN, MBE

Abstract:
Effect of N incorporation on the optical properites such as the photoluminescence characteristics of GaAsSb(N)/GaAs single quantum well structures has been studied. Elelctroluminescence has been observed in the wavelength range of 1.55-1.82 microns range at 10K.

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Nanotech 2007 Conference Program Abstract

 
 

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