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Compact Model of drain-current in Double-Gate MOSFETs including carrier quantization and short-channel effects

X. Loussier, D. Munteanu, J.L. Autran, S. Harrison and R. Cerutti
L2MP, FR

Keywords:
double-gate, compact modeling, quantum effects, short-channel effects

Abstract:
Double-Gate (DG) structure has been in the last years the object of intensive research because its enormous potentiality to push back the integration limits to which conventional devices are subjected. Although the operation of DG transistor is similar to the conventional MOSFET, the physics of DG MOSFET is more complicated. Moreover, physical phenomena such as 2D electrostatics or carrier quantization have to be considered, since DG structure will be precisely used to design very integrated devices (with ultra-short channel and extremely thin films). Therefore, new compact models, dedicated the circuit simulation, have to be developed for DG. Several interesting models have been proposed for the classical (i.e. without quantum effects) drain current (ID) in long channels DG or for short channel DG in the subthreshold regime. In this work, we propose a compact model which combines short-channel with quantum effects and which is continuous over all operation regimes. The model can be directly implemented in a TCAD circuit simulator for the simulation of DG MOSFET based-circuits. A full 2-D quantum numerical simulation code is used for model validation. Finally, ID predicted by the model is compared with experimental data measured on DG devices fabricated by SON process.

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