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Enhanced Junction Capacitance Modeling

F.G. Anderson, R.M. Rassel and M.A. Lavoie
IBM Microelectronics, US

Keywords:
varactor, junction capacitance, modeling

Abstract:
The current standard diode junction capacitance models do not yield high quality models for hyperabrupt junction varactors that are constructed from several implants. We describe a new enhancement that employs the actual (exponential) doping profiles that does yield good fits and physical parameters.

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