Nanotechnology Conference and Trade Show - Nanotech 2006
> Program > Technical Conferences > Business & Development > Nano Impact Workshop > Nanotech Job Fair > Expo
Program
Sessions
Sunday
Monday
Tuesday
Wednesday
Thursday
Index of Authors
Index of Keywords
Confirmed Speakers
Conferences & Symposia

Conference Proceedings

Conference Technical Proceedings

A Defect Model for Metallic Carbon Nanotubes in Cell-based Logic Circuits

H. Hashempour and F. Lombardi
Northeastern University, US

Keywords:
CNTFET, metallic CNT, source-drain short FET, defect modeling

Abstract:
Carbon Nanotube based Field Effect Transistors (CNTFET) are promising nano scaled devices for implementing high performance, highly integrated, and low power circuits. The main component of a CNTFET is a single-wall
carbon nanotube (SWCNT); its conductance is determined by the so-called chirality of the tube and is extremely hard to control during manufacturing. Conducting nanotubes can lead to defective CNTFETs similar to source-drain short faults in Metal Oxide Semiconductor Field Effect
Transistors (MOSFET). This paper presents a model and a corresponding
detection technique for nano scaled defects arising from the presence of metallic carbon nanotubes. Using an optimal layout of CNTFET based circuits, such defects are modeled by traditional stuck-at faults (SSF) and detected by SSF test sets.

Back to Program

Sessions Sunday Monday Tuesday Wednesday Thursday Authors

Nanotech 2006 Conference Program Abstract

 
Nanotechnology Conference | Terms of use | Privacy policy | Contact | NSTI Home
Program | Technical Conferences | Business & Development | Nano Impact Workshop | Nanotech Job Fair | Expo |
Nanotech 2006 Home | Press Room | Venue | Subscribe | Site Map
Names, and logos of other organizations are the property of those organizations and not of NSTI.
This event is not open to the general public and NSTI reserves the right to refuse admission and participation to any individual.