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Effects of Scaling on Modeling of Analog RF MOS Devices

Y. Liu, S. Cao, T.Y. Oh, B. Wu, O. Tornblad and R.W. Dutton
Stanford University, US

Keywords:
TCAD, RF, noise, impedence field, nonlinear distortion

Abstract:
This paper uses advanced TCAD tools—both IMF-based noise modeling and HB-based distortion modeling—to extract parameters of key importance in developing compact models. Additionally, the TCAD-based modeling provides insight into technology constraints that can potentially influence future MOS scaling for analog applications.

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