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Formation of 3-dimensional SiGe quantum dot crystals

C. Dais, P. Käser, H. Solak, Y. Ekinci, E. Deckhardt, E. Müller, J. Stangl, G. Bauer and D. Grützmacher
Paul Scherrer Institut, CH

Keywords:
quantum dot crystal, Ge dots, X-ray interference lithography

Abstract:
Templated self-organization has been used to prepare 3-dimensional quantum dot crystals containing Ge dots in a Si host crystal. Si (100) substrates have been patterned with 2-dimensional hole gratings using X-ray interference lithography and reactive ion etching. Subsequently, molecular beam epitaxy was employed to grow Si/Ge quantum dot stacks on the prepatterned substrates. In the first Ge quantum dot layer the dots align with holes provided by the prepatterning. Continuation of depositing Si/Ge layers leads to alignment of dots to the first layer due to strain fields. The Ge dots exhibit a remarkably narrow size distribution and close to perfect ordering. The quantum dot crystals have been subject to analysis by TEM, AFM, X-ray diffraction, photoluminescence and absorption spectroscopy. Our results indictae that the 2- and 3-dimensional Ge quantum dot crystals may open a new routes towards the realization of nanoelectronics, spintronics and quantum computing.

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