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Capillary filling speed in silicon dioxide nano-channels

S.E. Jarlgaard, M.B.L. Mikkelsen, P. Skafte-Pedersen, H. Bruus and A. Kristensen
Technical University of Denmark, DK

Keywords:
nanofluidics, nanochannel, fabrication, capillarity

Abstract:
We present a simple silicon-based fabrication technique for nanocapillaries based on controlled growth of silicon-dioxide, UV lithography, etching with etch-stop, and glass wafer bonding. Our approach improves state-of-the-art with respect to the obtained cross-wafer homogeneity and precision in the height of the nanocapillaries. The improvement is due to our use of the silicon substrate as an etch stop. We extend the results in Tas et al., Appl. Phys. Lett., Vol. 85, 3274 (2004), by measuring capillary filling speed on seven different channel heights, ranging from 25 to 3400 nm. A systematic deviation from bulk behaviour has been observed for channel heights below 100 nm.

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