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Towards self-assembled capacitor structures for memory-like devices

X. Zhu, P. Evans, W.R. Hendren, D. O’Connor, R.J. Pollard, J.M. Gregg, R.M. Bowman, F.D. Morrison and J.F. Scott
Queen’s University of Belfast, UK

Keywords:
nanoscale, ferroelectric, memory, anodic alumina template

Abstract:
The paper describes the fabrication and characterisation of ferroelectric nanoscale capacitors. The capacitors are formed by the combination of chemical deposition of PZT and self assembly of metallic nanowires that are used to form an integrated lower electrode technology.

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