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On the Compact Modelling of Induced Gate Noise in the MOS Transistor

A.S. Roy and C.C. Enz
Swiss Federal Institute of Technology, Lausanne (EPFL), CH

Keywords:
MOSFET, mobility model, noise

Abstract:
This work presents a analytical model to calculate gate related noise parameters for any arbitrary velocity field relationship and discusses some finer point of diffusivity modeling and impact of those effect on gate related noise parameters.

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