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A Novel Approach of Sample Preparation for SCM Inspection in the DRAM Device Structures

J.L. Lue, H.W Liu, E. Wu, B. Pai, S. Fan and T. Wang
ProMOS Technologies Inc, TW

Keywords:
deep trench, SCM, DRAM, 2-D doping

Abstract:
This paper discusses the removal of the doped-polysilicon of a gate transistor by wet chemical etching containing the spacer oxide and nitride that remain. This technique significantly improves the image quality of 2-D doping profile of SCM that properly provides the results of the desired device structures for inline monitoring and failure analysis or for product characterization.

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