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Numerical Modeling of Nanoscale Silicon Photodetectors that Use Electromagnetic Resonance Modes to Enhance Performance

D. Crouse and P. Keshavareddy
The City College of New York, US

Keywords:
silicon, photodetectors, surface plasmons, numerical modeling, optical communications

Abstract:
Several high responsivity, high bandwidth, low bit error ratio (BER) nanoscale Si photodetectors are modeled including metal-semiconductor-metal photodetectors (MSM-PD), MSM-PDs fabricated on silicon-on-insulator substrates, and avalanche photodiodes. The authors have analyzed surface plasmons and other electromagnetic resonance modes (ER) and OM modes including Wood-Rayleigh anomalies and diffraction in structures with nanometer-sized features and have found that the use of combinations of these modes can perform light channeling and light localization that can be applied to the development of photodetectors. In this work, the ERs and OMs within the nanoscale Si photodetecting structures are modeled, all aspects of electron and hole generation, recombination, drift and multiplication are calculated, eye diagrams are constructed, and the maximum bandwidth, responsivity, quality factor and BER are calculated given a 256 bit non-return to zero pseudo-random bit sequence optical signal. Comparisons of these photodetectors, performance characteristics of each one, and applications of these devices are discussed.

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