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Theory and Modeling Techniques used in PSP Model

G. Gildenblat, X. Li, H. Wang, W. Wu, A. Jha, R. van Langevelde, A.J. Scholten, G.D.J. Smit and D.B.M. Klaassen
Pennsylvania State University, US

Keywords:
compact MOSFET model, PSP, surface potential

Abstract:
This paper describes theoretical foundation and details of the new compact modeling techniques used in the advanced surface-potential-based compact MOSFET model PSP, jointly developed by the Pennsylvania State University and Philips Research. Specific topics include surface potential equation, generalized symmetric linearization method and non-uniformity of the vertical impurity profile.

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