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New One-Particle Monte Carlo Method for Nanoscale Device Simulation

S.C. Brugger and A. Schenk
Swiss Federal Institut of Technology, CH

Keywords:
device simulation, Monte Carlo, generation-recombination, impact ionisation

Abstract:
A new one-particle Monte Carlo iteration scheme has been found to
self-consistently take into account generation-recombination
processes. The basic idea is to couple the BTE not only with the
Poisson equation, but also with the continuity equation by using the
exact transport coefficients from the MC simulation in high-field
regions and the known analytical transport coefficients in low-field
regions. This approach will be useful e.g. for the simulation of
floating body effects in nanoscale double- and multi-gate SOI MOSFETs.

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