Crystalline Magnetotunnel Junctions: Fe-MgO-Fe, Fe-FeOMgO-Fe and Fe-AuMgOAu-Fe
M. Stilling, K. Stokbro and K. Flensberg
Copenhagen University, DK
quantum transport, DFT
The dimension of electronic devices is rapidly scaling down, and the ratio between surface and bulk atoms therefore increasing. This has the consequence that the interfaces between different parts of the device start to have a strong effect on the device performance. The Atomistix Tool Kit (ATK) from Atomistix allows for accurate modelling of the electrical properties of interfaces between metals, oxides and semiconductors, and thus calculating the effect of the different interfaces on the performance of electronic devices. The calculations are based on a state of art Non-Equilibrium Green’s Functions (NEGF) implementation of Density Functional Theory (DFT).
I the talk I will present results for the spin transport across MgO layers coupled with Fe electrodes. This system has recently gained a lot of interest, due to the ability of the MgO layers to function as a spin filter. We present new calculations of the spin transport in this system, and analyse the results in terms of spin-dependent scattering states. The calculations give new insight to the physical mechanism underlying the spin-filtering effects in this system.
In another example we have calculated the leakage current through a Si-SiO2-Si interface and related the transmission coefficient to the interface structure. The calculations give new insight into the feasibility of scaling down the oxide layers in MOS devices
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Nanotech 2006 Conference Program Abstract