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Halo Doping: Physical Effects and Compact Modeling

S. Mudanai, R. Rios, W-K Shih, P. Packan and S-W Lee
Intel Corp., US

Keywords:
bulkMOSFET, halo, compact modeling

Abstract:
As the devices are scaled to ultra short channel lengths, pocket or halo implants have been used widely to reduce DIBL and other short channel effects. Although, the use of halo implants helps with control of the short transistors in a given technology, the performance of the analog transistors which are typically longer is degraded severely because of these implants. This issue is becoming more relevant with the increase in integration of analog and RF components with digital circuits on the same chip. The longer gate length analog transistors with halo implants exhibit reduced output resistance and long channel drain induced barrier lowering. Halo implants also impact the extraction of mobility for long channel transistors and cause the well known reverse short channel effect. In the literature reverse short channel effect has been modeled using different approaches including the use of a length dependent doping model. However, these models do not capture other halo effects. Compact modeling of these halo effects in transistors require a comprehensive understanding of how the implants affect the output resistance, dibl and threshold voltages. The physics of output resistance degradation due to halo implants, will be analyzed through the use of numerical device simulations. The analysis presents for the first time a comprehensive explanation of the output resistance degradation due to the halo implant.

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