Nanotechnology Conference and Trade Show - Nanotech 2006
> Program > Technical Conferences > Business & Development > Nano Impact Workshop > Nanotech Job Fair > Expo
Program
Sessions
Sunday
Monday
Tuesday
Wednesday
Thursday
Index of Authors
Index of Keywords
Confirmed Speakers
Conferences & Symposia

Conference Proceedings

Conference Technical Proceedings

Interrelations between Threshold Voltage Definitions and Extraction Methods

M.C. Schneider, C. Galup-Montoro, M.B. Machado and A.I.A. Cunha
Federal University of Santa Catarina, BR

Keywords:
MOSFET threshold voltage, MOSFET parameter extraction, MOSFET modeling

Abstract:
This paper presents a brief discussion on the main MOSFET threshold voltage definitions available in the literature as well as on associated extraction methodologies. In order to compare these definitions and methodologies, we take advantage of the Advanced Compact MOSFET (ACM) model, which accurately relates surface potential to inversion charge density in all regions of operation. A new robust and precise extraction method based on the transconductance-to-current ratio characteristic is proposed, compared with already existing methods, and experimentally verified in 0.18 micrometer CMOS technology.

Back to Program

Sessions Sunday Monday Tuesday Wednesday Thursday Authors

Nanotech 2006 Conference Program Abstract

 
Nanotechnology Conference | Terms of use | Privacy policy | Contact | NSTI Home
Program | Technical Conferences | Business & Development | Nano Impact Workshop | Nanotech Job Fair | Expo |
Nanotech 2006 Home | Press Room | Venue | Subscribe | Site Map
Names, and logos of other organizations are the property of those organizations and not of NSTI.
This event is not open to the general public and NSTI reserves the right to refuse admission and participation to any individual.