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A Unified Parameter Extraction Procedure for Scalable Bipolar Transistor Model Mextram

H-C Wu, S. Mijalkovic and J.N. Burghartz
Delft university of technology, NL

Keywords:
scalable Mextram model, unified parameter extraction, VHDL Verilog-A, SiGe HBT

Abstract:
A unified parameters extraction procedure for temperature and geometry scalable bipolar transistor model Mextram has been demonstrated using an example of high-speed SiGe HBT technology. The essential feature of the proposed methodology is a direct extraction of the scaling parameters from the measured electrical characteristics and the model parameters are extracted only once for a single reference geometry.

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