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Compact Models for Double Gate and Surrounding Gate MOSFETs

H. Abebe, E. Cumberbatch, H. Morris and S. Uno
San Jose State University, US

Keywords:
analytic solutions, compact model, double gate MOSFETs, surrounding gate MOSFETs, quantum corrections

Abstract:
The models presented by Lu and Taur, [1], for lightly doped double gate and surrounding gate MOSFETs each require numerical solution of a transcendental equation. In this paper we present explicit, analytic solutions of these equations based on the Lambert function, [2]. These solutions are shown to be accurate compare with exact numerical solutions. Quantum effect corrections to the IDS – VDS formulae are also included, and these are based on analytic solutions obtained for the density gradient model, [3].
 
[1] H. Lu and Y. Taur, “Physics-Based, Non-Charge-Sheet Compact Modeling of Double Gate MOSFETs,” Nanotech, Anaheim, Ca., 2005.
[2] A. Ortiz-Conde, F. J. Garcia Sanchez, M.Guzman, “Exact Analytical Solution of Channel Surface Potential as an Explicit Function of Gate Voltage in Undoped-body MOSFETs Using the Lambert W function and a Threshold Voltage Definition Therefrom,” Solid-State Electronics 47 (2003) 2067-2074.
[3] S. Uno, H. Abebe, and E.Cumberbatch, “Analytical Solutions to Quantum Drift-Diffusion Equations for Quantum Mechanical Modeling of MOS Structures,” Solid State Devices and Materials, Kobe, Japan, 2005.

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