Compact Models for Double Gate and Surrounding Gate MOSFETs
H. Abebe, E. Cumberbatch, H. Morris and S. Uno
San Jose State University, US
analytic solutions, compact model, double gate MOSFETs, surrounding gate MOSFETs, quantum corrections
The models presented by Lu and Taur, , for lightly doped double gate and surrounding gate MOSFETs each require numerical solution of a transcendental equation. In this paper we present explicit, analytic solutions of these equations based on the Lambert function, . These solutions are shown to be accurate compare with exact numerical solutions. Quantum effect corrections to the IDS – VDS formulae are also included, and these are based on analytic solutions obtained for the density gradient model, .
 H. Lu and Y. Taur, “Physics-Based, Non-Charge-Sheet Compact Modeling of Double Gate MOSFETs,” Nanotech, Anaheim, Ca., 2005.
 A. Ortiz-Conde, F. J. Garcia Sanchez, M.Guzman, “Exact Analytical Solution of Channel Surface Potential as an Explicit Function of Gate Voltage in Undoped-body MOSFETs Using the Lambert W function and a Threshold Voltage Definition Therefrom,” Solid-State Electronics 47 (2003) 2067-2074.
 S. Uno, H. Abebe, and E.Cumberbatch, “Analytical Solutions to Quantum Drift-Diffusion Equations for Quantum Mechanical Modeling of MOS Structures,” Solid State Devices and Materials, Kobe, Japan, 2005.
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Nanotech 2006 Conference Program Abstract