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Charge-storage calculation for Si-based bipolar transistors from device simulation

M. Schröter and H. Tran
UCSD, US

Keywords:
bipolar transistors, compact modeling, hicum

Abstract:
Various methods for calculating regional charge storage components in bipolar transistors from
device simulation results are compared with respect to their usefulness for compact modeling. The
methods are evaluated for Si and SiGe transistors with very different doping profiles representing
existing process technologies. Causes for the failure of certain methods are discussed. A selected
method is then applied to a regional analysis of bias dependent compact model components.

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