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Fabricating Nanoscale Features Using the 2-Step NERIME TSI Nanolithography Process

S.F. Gilmartin, K. Arshak, D. Collins, O. Korostynska and A. Arshak
Analog Devices, IE

Keywords:
ion beam lithography, NERIME, nanolithography, topography, etch, semiconductor fabrication

Abstract:
The 2-step negative resist image by dry etching (2-step NERIME) focused ion beam (FIB) top surface imaging (TSI) process is a novel nanolithography technique for creating nanometer scale resist features using conventional DNQ/novolak resists. The 2-step NERIME process combines the advantages of FIB lithography and TSI processing, and delivers high aspect ratio nanometer-scale resist CDs. Previous work has reported 90nm resist critical dimensions (CDs) on topography using the 2-Step NERIME process. We present 90nm resist CDs over substrate topography, and demonstrate fabrication of 80nm etched features masked using the 2-step NERIME process.
The etched nanoscale features exhibit minimal line edge roughness (LER) and excellent profile control, and demonstrate the suitability of the 2-step NERIME process as a nanolithography technique for applications requiring nanometer feature CD and profile control. Such etched features are of potential use in a variety of applications such as nanosensors, NEMs, MEMs, DRAM, CMOS and BiCMOS processing.

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