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Analytical Models for Quantized Sub-Band Energy Levels and Inversion Charge Centroid of MOS Structures Derived from Asymptotic and WKB Approximations

H. Abebe, E. Cumberbatch, H. Morris and V. Tyree
USC/ISI, US

Keywords:
charge centroid, device modeling, MOSFET, quantum effect, sub-Band energy

Abstract:
Quantum effects on MOS structures investigation.

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