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Recent Advances in the EKV3.0 MOSFET Model

M. Bucher, A. Bazigos, E. Kitonaki, F. Krummenacher
Technical University of Crete, GR

Keywords:
compact model, inversion charge-based model, CMOS scaling, advanced CMOS technology

Abstract:
Modeling solutions adopted in the EKV3.0 MOS transistor model to address advanced CMOS technology are presented. Extensions to the ideal, inversion charge-based model include advanced charge-based mobility and velocity saturation modeling. Scaling behavior in advanced CMOS technology over geometry and temperature is described. Further model extensions to cover parasitic effects such
as edge-conduction effect in shallow-trench isolated structures are presented. The model extensions are illustrated with examples from a variety of advanced CMOS processes. Finally, some practical issues for the use of the EKV3.0 model are discussed.

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