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Advanced Compact MOSFET Model HiSIM2 Based on Surface Potentials with a Minimum Number of Approximation

M. Miura-Mattausch, D. Navarro, N. Sadachika, G. Suzuki, Y. Takeda, M. Miyake, T. Warabino, K. Machida, T. Ezaki, H.J. Mattausch, T. Ohguro, T. Iizuka, M. Taguchi, S. Kumashiro, R. Inagaki and S. Miyamoto
Hiroshima University, JP

Keywords:
MOSFET, comapct model, surface potential, RF applications

Abstract:
The compact model HiSIM2 supports RF-circuit applications with advanced MOSFETs and is a further development of HiSIM1 which has been released since 2001 for public usage. Important features, required for the real applications, are summarized. In particular, HiSIM2 models advanced MOSFET technologies by determining the surface potentials from the Poisson equation with a minimum number of approximations.

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