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Compact Model Methodology for Dual-Stress Nitride Liner Films in a 90nm SOI ULSI Technology

R.Q. Williams, D. Chidambarrao, J.H. McCullen, S. Narasimha, T.G. Mitchell and D. Onsongo
IBM Corporation, US

Keywords:
compact model, nitride stress liner, SOI, netlisting, extraction

Abstract:
This work presents a novel methodology for a physically-based, layout-dependent nitride liner stress model that works with readily-available compact models. The methodology includes a data-calibrated, semi-empricial model and is tightly-coupled to circuit netlist extraction for accurate results. The model formulation is summarized and simulation results for an SOI implementation are provided.

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