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Comparison of Three Region Multiple Gate Nanoscale Structures for Reduced Short Channel Effects and High Device Reliability

K. Goel, M. Saxena, M. Gupta and R.S. Gupta
Professor, IN

Keywords:
SCEs, hot electron effects, asymmetric oxide stack

Abstract:
We have modeled a new structure TRIMGAS which has 3 gate materials in the gate and an oxide stack. we have compared various parameters to see whether this strucure is superior to any of our previously propsed models or not.also the new three region model developed has been verified using simulator:ATLAS and found good agreement between the two. so finally we said that our three region analysis can be taken as a unified model to find parameters of already existant MOSFETs also in additon to the new propsed strcuture.

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