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A transient circuit model for a phase change memory element

H.G.A. Huizing, D. Tio Castro, J.C.J. Paasschens and M.H.R. Lankhorst
Philips, NL

Keywords:
lumped element model phase change memory

Abstract:
A transient lumped element model for a phase change memory (PCM) cell is developed for use in a circuit simulator. Unlike existing models, this model calculates threshold voltage and off-state resistance drift as found in PCM-cells. After an explanation of the model, simulations results are shown and compared with measurements.

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