Nanotechnology Conference and Trade Show - Nanotech 2006
> Program > Technical Conferences > Business & Development > Nano Impact Workshop > Nanotech Job Fair > Expo
Program
Sessions
Sunday
Monday
Tuesday
Wednesday
Thursday
Index of Authors
Index of Keywords
Confirmed Speakers
Conferences & Symposia

Conference Proceedings

Conference Technical Proceedings

BSIM4 and BSIM Multi-Gate Progress

M.V. Dunga, C.–H. Lin, X. Xi, S. Chen, D.D. Lu, A.M. Niknejad and C. Hu
UC Berkeley, US

Keywords:
compact modeling, BSIM

Abstract:
Compact models form an integral part of any circuit design environment, ranging from analog and digital design to mixed-signal design worlds. The models need to be developed and improved in parallel with technology advancements to enable an efficient and quick adoption of the new technologies. Towards this end, BSIM models have continuously addressed the modeling challenges posed by N+1 and N+2 technology nodes. In this paper, the progress made towards enhancing the bulk MOSFET model BSIM4 and the Multi-Gate transistor model BSIM-MG are presented.

Back to Program

Sessions Sunday Monday Tuesday Wednesday Thursday Authors

Nanotech 2006 Conference Program Abstract

 
Nanotechnology Conference | Terms of use | Privacy policy | Contact | NSTI Home
Program | Technical Conferences | Business & Development | Nano Impact Workshop | Nanotech Job Fair | Expo |
Nanotech 2006 Home | Press Room | Venue | Subscribe | Site Map
Names, and logos of other organizations are the property of those organizations and not of NSTI.
This event is not open to the general public and NSTI reserves the right to refuse admission and participation to any individual.