Nanotechnology Conference and Trade Show - Nanotech 2006
> Program > Technical Conferences > Business & Development > Nano Impact Workshop > Nanotech Job Fair > Expo
Program
Sessions
Sunday
Monday
Tuesday
Wednesday
Thursday
Index of Authors
Index of Keywords
Confirmed Speakers
Conferences & Symposia

Conference Proceedings

Conference Technical Proceedings

Inner Sidewall Gate MOSFET with HfO2 gate Dielectric and Pt electrode

K. Im, C-G Ahn, J-H Yang, I-B Baek, C-J Choi, S. Lee, H. Hwang and W-J Cho
Electronics and Telecommunications Research Institute, KR

Keywords:
MOSFET, UTB, high-k, metal gate

Abstract:
UTB ISG MOSFET with gate length of 60 nm was fabricated with HfO2 gate dielectric and Pt gate electrode. The proposed device has some advantage over conventional replacement gate process. Besides simpler process, the remaining doped polysilicon can be a role as elevated source drain. And the gate length is easily adjustable by sidewall thickness.

Back to Program

Sessions Sunday Monday Tuesday Wednesday Thursday Authors

Nanotech 2006 Conference Program Abstract

 
Nanotechnology Conference | Terms of use | Privacy policy | Contact | NSTI Home
Program | Technical Conferences | Business & Development | Nano Impact Workshop | Nanotech Job Fair | Expo |
Nanotech 2006 Home | Press Room | Venue | Subscribe | Site Map
Names, and logos of other organizations are the property of those organizations and not of NSTI.
This event is not open to the general public and NSTI reserves the right to refuse admission and participation to any individual.