Electromechanical Modeling of MEMS Resonators with MOSFET Detection
N. Abelé, V. Pott, K. Boucart, F. Casset, K. Séguéni, P. Ancey and A.M. Ionescu
Swiss Federal Institute of Technology of Lausanne, CH
MEMS, resonator, modeling, RSG-MOSFET, MOSFET detection
This work reports on analytical modeling and investigation of Resonant Suspended-Gate MOSFETs (RSG-MOSFET) as future solutions for RF applications including MEMS and ICs. Pure metal-metal capacitive detection for resonators is shown to be the most limiting factor for the use of high frequency resonators in circuit application. We demonstrate the necessity of using a MOSFET detection instead of a capacitive one for very high frequency resonators. The analytical model is based on the Resonant Gate Transistor (RGT) model that was adjusted to include new resonator geometries, scaled nm-to-ìm device dimensions and based on a more advanced transistor model.
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Nanotech 2005 Conference Program Abstract