RF Modeling for FDSOI MOSFET and Self Heating Effect on RF Parameter Extraction
H. Wan, P. Su, S.K.H. Fung, C-L Chen, P.W. Wyatt, A.M. Niknejad and C. Hu
Dept of EECS, UC Berkeley, US
FDSOI, RF, compact model, self heating
In this paper, the BSIMSOI RF model for FDSOI MOSFET is introduced and verified. Self-heating effect plays an important role in RF S-parameter fitting and the thermal resistance needs to be correctly extracted. A new extraction method of thermal resistance also proposed in this paper.
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Nanotech 2005 Conference Program Abstract